Nakamura Tomoji | Fujitsu Lab. Ltd.

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概要

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著作論文

Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
Thermal Expansion Coefficients of Nano-Clustering Silica (NCS) Films Measured by X-Ray Reflectivity and Substrate Curvature Methods
Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
Stress Migration Phenomenon in Narrow Copper Interconnects
Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
Simple Modeling and Characterization of Stress Migration Phenomena in Cu Interconnects
Influence of Titanium Liner on Resistivity of Copper Interconnects
Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects
Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology
Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation
Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
Development of Cu/Insulation Layer Interface Crack Extension Simulation with Crystal Plasticity
Impact of Thermomechanical Stresses on Bumpless Chip in Stacked Wafer Structure
Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure

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