Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
スポンサーリンク
概要
- 論文の詳細を見る
In this study, we observed a misfit (MS) dislocation in a SiGe film on a Si substrate (SiGe/Si) by laser scattering, which is a nondestructive method; furthermore, using this technique, we determined the velocity of a threading (TH) dislocation in a 56-nm-thick Si0.76Ge0.24 film over a wide temperature range. It was found that the TH dislocation velocity is described by an Arrhenius plot with an activation energy of 1.9 eV. The TH dislocation velocity at 375 °C is observed on the extrapolation of the Arrhenius plots obtained in the high-temperature region; this indicates that the TH dislocation motion in a Si0.76Ge0.24 film is thermally activated at this low temperature. It was also clarified that this technique is effective for regions with a high density of MS dislocations.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-02-25
著者
-
Hara Akito
Electrical Engineering Faculty Of Engineering Tohoku Gakuin University
-
Nakamura Tomoji
Fujitsu Lab. Ltd.
-
Tamura Naoyoshi
Fujitsu Lab. Ltd.
-
Hara Akito
Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan
-
Nakamura Tomoji
Fujitsu Laboratories Limited, Akiruno, Tokyo 197-0833, Japan
関連論文
- Investigation of Degradation model for Ultra-thin Gate Dielectrics
- Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
- Thermal Expansion Coefficients of Nano-Clustering Silica (NCS) Films Measured by X-Ray Reflectivity and Substrate Curvature Methods
- Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
- Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films
- Stress Migration Phenomenon in Narrow Copper Interconnects
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
- Simple Modeling and Characterization of Stress Migration Phenomena in Cu Interconnects
- Diffusion Coefficient of Hydrogen in Silicon at an Intermediate Temperature
- Influence of Titanium Liner on Resistivity of Copper Interconnects
- Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects
- Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology
- Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
- Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation
- Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
- Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
- Potential of and Issues with Multiple-Stressor Technology in High-Performance 45 nm Generation Devices
- Development of Cu/Insulation Layer Interface Crack Extension Simulation with Crystal Plasticity
- Impact of Thermomechanical Stresses on Bumpless Chip in Stacked Wafer Structure
- Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
- Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures
- Structural Elements of Shallow Thermal Donors Formed in Nitrogen-Gas-Doped Silicon Crystals
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure