Diffusion Coefficient of Hydrogen in Silicon at an Intermediate Temperature
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概要
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The hydrogen diffusion coefficient in silicon (Si) in an intermediate temperature region (429–800 °C) is obtained using an enhanced formation of thermal double donors (TDDs), which is a phenomenon caused by in-grown hydrogen. An as-grown Czochralski (CZ) Si ingot contains hydrogen as a low-concentration impurity. Although present in a very low quantity, it is possible to observe an enhanced TDD formation due to in-grown hydrogen as a variation of the resistance of the specimen using a high-resistance ingot (${>}500$ $\Omega$ cm). The hydrogen diffusion coefficient obtained using the depth profile of TDDs, which are generated under the influence of the depth profile of the in-grown hydrogen, shows a value close to that given by Van Wieringen and Warmoltz (VWW) [Physica 22 (1956) 849]. Furthermore, it is found that the activation energy of hydrogen diffusion in the intermediate temperature region is almost the same as that obtained by VWW. This result indicates that the hydrogen diffusion coefficient can be expressed by an equation given by VWW at an intermediate temperature region.
- 2007-03-15
著者
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Hara Akito
Electrical Engineering Faculty Of Engineering Tohoku Gakuin University
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Hara Akito
Electrical Engineering, Faculty of Engineering, Tohoku Gakuin University, 13-1 Chuo-1, Tagajo, Miyagi 985-8537, Japan
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