Structural Elements of Shallow Thermal Donors Formed in Nitrogen-Gas-Doped Silicon Crystals
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概要
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It has been reported that shallow thermal donors (STDs) are formed in oxygen-rich silicon (Si) crystals preannealed in nitrogen gas (N-gas-doped) and also in hydrogen-doped (H-doped) oxygen-rich Si crystals. The STDs formed in these crystals exhibit very similar electronic structures. Experiments using far-infrared optical absorption showed that several hydrogen-like STDs were formed at the same time and their energy levels in both the above-mentioned crystals were very similar. It has also been reported that the $g$-values of the STDs formed in both the crystals were identical. On the basis of electron–nucleus double resonance results, it has been strongly suggested that a hydrogen impurity is incorporated as a structural element of the STDs formed in the H-doped Si crystals. However, the origin of the STDs that are formed in N-gas-doped Si crystals is still unclear. To clarify this point, hydrogen detection in N-gas-doped Si was conducted and the annealing behaviors of STDs in N-gas-doped Si and H-doped Si were compared by electron spin resonance and far-infrared optical absorption measurement. It was concluded that the origin of the STDs formed in N-gas-doped Si crystals is not related to the hydrogen impurity.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-02-15
著者
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Hara Akito
Electrical Engineering Faculty Of Engineering Tohoku Gakuin University
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Hara Akito
Electronic Engineering, Faculty of Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan
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