Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Hara Akito
Electronic Engineering Tohoku-gakuin University
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Hara Akito
Electrical Engineering Faculty Of Engineering Tohoku Gakuin University
関連論文
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- Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
- Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
- Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures
- Structural Elements of Shallow Thermal Donors Formed in Nitrogen-Gas-Doped Silicon Crystals
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure