Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films

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概要

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• Hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) have attracted attention for application to the operation of organic light-emitting diodes (OLEDs). The monolithic integration of nc-Si:H TFTs and polycrystalline silicon (poly-Si) TFTs and the use of nc-Si:H TFTs for operating an OLED are candidate technologies to achieve OLED system-on-glass. To develop such a system, it is necessary to fabricate poly-Si films without employing thermal dehydrogenation because hydrogen needs to be maintained in the channel region of nc-Si:H TFTs. In this study, we optimized the laser dehydrogenation process as a substitute for thermal dehydrogenation by using a diode-pumped solid-state continuous-wave green laser (Nd:YVO4, $2\omega=532$ nm) to fabricate large lateral poly-Si films with grain sizes of $3\times 20$ μm2. The performance of poly-Si TFTs is well known to be sensitive to the quality of poly-Si films. In order to evaluate the electrical properties of poly-Si films, TFTs were fabricated by conventional processes. The field-effect mobility, threshold voltage, and $S$-value of the poly-Si TFTs were 220 cm2 V-1 s-1, $-1.0$ V, and 0.45 V/dec, respectively. The quality of the poly-Si film fabricated in this experiment was sufficiently high for the integration of peripheral circuits.

• 2009-12-25

著者

• KITAHARA Kuninori

  Interdisciplinary Faculty of Science and Engineering, Shimane University

• Hara Akito

  Electrical Engineering Faculty Of Engineering Tohoku Gakuin University

• Sato Tadashi

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-6537, Japan

• Hara Akito

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-6537, Japan

• Yamamoto Kenichi

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

• Kambara Junji

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

• Kambara Junji

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Yamamoto Kenichi

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

関連論文

• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Glass Substrate Using Back-Surface Exposure
• Lateral Growth of Polycrystalline Silicon–Germanium Thin Films Enhanced by Continuous-Wave Laser Crystallization
• Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films
• Diffusion Coefficient of Hydrogen in Silicon at an Intermediate Temperature
• Electrochemical and Raman-Scattering Characterizations of Defects in Polycrystalline Silicon Thin Films Formed by Excimer-Laser Annealing, Solid-Phase Crystallization, and Continuous-Wave Laser Lateral Crystallization
• Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
• Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films
• Suppression of Defects during Metal-Induced Lateral Crystallization of Polycrystalline-Silicon Thin Films by Directed Lateral Growth
• Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy
• Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures
• Structural Elements of Shallow Thermal Donors Formed in Nitrogen-Gas-Doped Silicon Crystals
• Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure

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