Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Glass Substrate Using Back-Surface Exposure
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概要
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Improving the device structure and quality of polycrystalline silicon (poly-Si) films is essential for enhancing the performance of poly-Si thin-film transistors (TFTs). A multigate structure can potentially be used to realize ideal poly-Si TFTs. We combined a self-aligned metal double-gate structure (i.e., a structure with metal top and bottom gates) with a large-grained poly-Si film. Then, we fabricated high-performance n-channel (n-ch) and p-channel (p-ch) low-temperature poly-Si TFTs on a glass substrate at 550 °C. The nominal field-effect mobilities of the n-ch and p-ch TFTs were 638 and 156 cm2 V-1 s-1, respectively, and the $s$-values of both the TFTs were nearly 130 mV/dec.
- 2011-02-25
著者
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KITAHARA Kuninori
Interdisciplinary Faculty of Science and Engineering, Shimane University
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Kondo Kenji
Department Of Electrical Engineering Faculty Of Science And Technology Keio University:fuji Electric
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Sato Tadashi
Department Of Applied Chemistry Faculty Of Science And Engineering Waseda Uiversity
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Hirose Kenta
Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Kitahara Kuninori
Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan
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Hara Akito
Department of Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan
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Kondo Kenji
Department of Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan
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