Electrochemical and Raman-Scattering Characterizations of Defects in Polycrystalline Silicon Thin Films Formed by Excimer-Laser Annealing, Solid-Phase Crystallization, and Continuous-Wave Laser Lateral Crystallization

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概要

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• We investigated the electronic activity of defects in polycrystalline silicon (poly-Si) thin films grown by excimer-laser annealing (ELA), solid-phase crystallization (SPC), and continuous-wave laser lateral crystallization (CLC). The activity of defects was deduced from the erosion by Secco etching, which is based on enhancement of etching due to electronically active states in the band gap. Hydrogenation protected grain boundaries (GBs) and sub-GBs from etching, which indicates that those defects are originally active and are inactivated by hydrogen. Ingrain defect density was characterized by variation of stress in films with etching, where stress was estimated using Raman spectroscopy. It is shown that ELA poly-Si contains a high density of active defects in grains, while SPC and CLC poly-Si films contain a lower density. That feature of ELA is attributed to freezing of defects in grains during rapid cooling after laser irradiation, which is consistent with the elimination of defects by post-annealing of the ELA film at 1000 °C. For CLC, we deduced that laterally directed growth is effective for decreasing defects.

• 2009-02-25

著者

• KITAHARA Kuninori

  Interdisciplinary Faculty of Science and Engineering, Shimane University

• Yamamoto Kenichi

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

• Ohashi Yasutaka

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Sasaki Nobuo

  Sharp Corp., 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• Yamamoto Kenichi

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

関連論文

• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Glass Substrate Using Back-Surface Exposure
• Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films
• Electrochemical and Raman-Scattering Characterizations of Defects in Polycrystalline Silicon Thin Films Formed by Excimer-Laser Annealing, Solid-Phase Crystallization, and Continuous-Wave Laser Lateral Crystallization
• Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
• Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films
• Suppression of Defects during Metal-Induced Lateral Crystallization of Polycrystalline-Silicon Thin Films by Directed Lateral Growth
• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

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