Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

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概要

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• The electrochemical and electronic activities of defects were investigated for excimer-laser-annealed polycrystalline silicon (poly-Si) thin films. Variations in surface geometry and Raman spectra with Secco-etching time were compared between ascrystallized and hydrogenated poly-Si films. For ascrystallized films, etching preferentially attacks defects at the grain boundary (GB). Furthermore, defects in grains were attacked by etching, which was deduced from etching rate and variation in the stress in films. Hydrogenation prior to etching effectively protects defects at GB and in grains from etching. The effects of hydrogenation were interpreted in terms of diminishing localized electronic states related to defects. Hydrogenation followed by Secco etching revealed submicron-size defects that were attributed to the segregation of oxide lying deep in films. The variation in the Raman spectra with etching time indicated that the local-vibration mode at 2000 cm-1 was related to electrochemically active defects terminated by hydrogen predominantly at GB. It was also shown that Raman scattering intensity is strongly modulated by interference in thinned films and the roughness of the etched surface.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2008-01-25

著者

• KITAHARA Kuninori

  Interdisciplinary Faculty of Science and Engineering, Shimane University

• Kobata Mitsunori

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Kobata Mitsunori

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Kambara Junji

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Ohashi Yasutaka

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Ogasawara Hiroya

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

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• Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films
• Electrochemical and Raman-Scattering Characterizations of Defects in Polycrystalline Silicon Thin Films Formed by Excimer-Laser Annealing, Solid-Phase Crystallization, and Continuous-Wave Laser Lateral Crystallization
• Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
• Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films
• Suppression of Defects during Metal-Induced Lateral Crystallization of Polycrystalline-Silicon Thin Films by Directed Lateral Growth
• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
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• Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

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