Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films

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概要

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• The hydrogenation effects on the chemical activity of defects in excimer-laser-annealed polycrystalline silicon (poly-Si) thin films were investigated by Secco etching, scanning electron microscopy, and Raman spectroscopy. In the case of as-crystallized poly-Si films, defects at grain boundaries (GBs) and in grains were preferentially etched. It was found that the tensile stress in poly-Si films was pronouncedly relieved by etching, which is attributed to the penetration of the etching solution to the interface between the poly-Si films and the SiO2 underlayers. In the case of sufficiently hydrogenated poly-Si films, no preferential etching at GBs and almost no relief of stress was found until disappearance of the poly-Si film. The hydrogenation effects on the chemical activity were attributed to the passivation of dangling bonds at GBs and in grains. The results of the analysis of Raman intensity for various film thicknesses were also shown.

• Japan Society of Applied Physicsの論文
• 2007-05-25

著者

• KITAHARA Kuninori

  Interdisciplinary Faculty of Science and Engineering, Shimane University

• Kitahara Kuninori

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Ohashi Yasutaka

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Matsumoto Shin

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

関連論文

• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Glass Substrate Using Back-Surface Exposure
• Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films
• Electrochemical and Raman-Scattering Characterizations of Defects in Polycrystalline Silicon Thin Films Formed by Excimer-Laser Annealing, Solid-Phase Crystallization, and Continuous-Wave Laser Lateral Crystallization
• Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
• Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films
• Suppression of Defects during Metal-Induced Lateral Crystallization of Polycrystalline-Silicon Thin Films by Directed Lateral Growth
• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

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