Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization

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概要

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• Continuous wave laser lateral crystallization (CLC) technology was applied to grow silicon--germanium (SiGe) thin films on glass substrates. The crystal structure and distribution of Ge in the films were characterized by optical and electron microscopies. The compounding of Ge with Si and the use of CLC resulted in the growth of crystals with lengths greater than 100 μm in the laser-scanning region, whereas such long crystals were not formed in pure Si films. For Si0.7Ge0.3, the orientation of the crystal surface normal was along \langle 111\rangle. Most crystalline boundaries were \Sigma 3 coincidence site lattices that were electrically inactive. High-angle or random grain boundaries were rarely found. Thus, the crystallized part can be regarded as a quasi-single crystal. The growth mode and segregation of Ge are discussed in terms of a constitutional undercooling model.

• 2011-11-25

著者

• KITAHARA Kuninori

  Interdisciplinary Faculty of Science and Engineering, Shimane University

• Hara Akito

  Electrical Engineering Faculty Of Engineering Tohoku Gakuin University

• Hirose Kenta

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Hara Akito

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-6537, Japan

• Kitahara Kuninori

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

• Suzuki Junki

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

• Kondo Kenji

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-6537, Japan

• Hirose Kenta

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

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• Electrochemical and Raman-Scattering Characterizations of Defects in Polycrystalline Silicon Thin Films Formed by Excimer-Laser Annealing, Solid-Phase Crystallization, and Continuous-Wave Laser Lateral Crystallization
• Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
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• Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures
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