Lateral Growth of Polycrystalline Silicon–Germanium Thin Films Enhanced by Continuous-Wave Laser Crystallization

スポンサーリンク

概要

• 論文の詳細を見る

• The lateral crystallization of silicon–germanium (Si–Ge) thin films on glass substrates was carried out by using a continuous-wave laser. The Ge composition $x$ and its distribution in the films were characterized by micro-Raman spectroscopy. Average $x$ values in two films were observed to be 0.38 and 0.06, which were nearly equal to 0.41 and 0.05 obtained by X-ray photoelectron spectroscopy. Cellular structures with ridges were observed in certain parts of both films, many of which oriented along the laser scanning direction. The lengths of especially long cells were ${>}100$ μm. Twin and grain boundaries were observed along the top of a ridge and the bottom of a valley, respectively. The mapping of the Raman spectra indicated that Ge segregates toward the grain boundaries. The formation of directed cellular structures can be explained by the constitutional undercooling model that is characteristic of alloys. The addition of Ge to Si thin films was found to be useful for enhancing lateral growth in Si-related thin films on glass.

• 2010-03-25

著者

• Sato Tadashi

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-6537, Japan

• Tadashi Sato

  Electronic Engineering, Tohoku Gakuin University, 13-1 Chuo-1, Tagajo, Miyagi 985-6537, Japan

• Hirose Kenta

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Kobata Mitsunori

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Kuninori Kitahara

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Akito Hara

  Electronic Engineering, Tohoku Gakuin University, 13-1 Chuo-1, Tagajo, Miyagi 985-6537, Japan

• Kobata Mitsunori

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Mitsunori Kobata

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Kenta Hirose

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

関連論文

• Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Glass Substrate Using Back-Surface Exposure
• Lateral Growth of Polycrystalline Silicon–Germanium Thin Films Enhanced by Continuous-Wave Laser Crystallization
• Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films
• Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
• Suppression of Defects during Metal-Induced Lateral Crystallization of Polycrystalline-Silicon Thin Films by Directed Lateral Growth
• Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

スポンサーリンク