Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors

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概要

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• We investigated hydrogenation of low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) from the point of view of the gettering phenomenon, specifically, using self-aligned metal double-gate p-channel LT poly-Si TFTs that had a small subthreshold swing value and a high field-effect mobility. Hydrogenation of TFTs was carried out by forming gas annealing. Our results indicate that the conventionally used hydrogenation temperature of 400 °C is considerably high because annealing at this temperature results in the re-emission of gettered hydrogen. Moreover, when annealing in forming gas, hydrogenation actually occurs during cooling from 400 °C, but not at 400 °C. The most important parameter for effective hydrogenation is the rate of cooling from 400 °C, but not the hydrogenation temperature of 400 °C.

• 2013-03-25

著者

• KITAHARA Kuninori

  Interdisciplinary Faculty of Science and Engineering, Shimane University

• Hara Akito

  Electrical Engineering Faculty Of Engineering Tohoku Gakuin University

• Ogata Hiroyuki

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

• Shika Yusuke

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

• Bessho Takuro

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

• Okabe Yasunori

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

• Kamo Shinya

  Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

関連論文

• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Glass Substrate Using Back-Surface Exposure
• Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films
• Diffusion Coefficient of Hydrogen in Silicon at an Intermediate Temperature
• Electrochemical and Raman-Scattering Characterizations of Defects in Polycrystalline Silicon Thin Films Formed by Excimer-Laser Annealing, Solid-Phase Crystallization, and Continuous-Wave Laser Lateral Crystallization
• Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
• Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films
• Suppression of Defects during Metal-Induced Lateral Crystallization of Polycrystalline-Silicon Thin Films by Directed Lateral Growth
• Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
• Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
• Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy
• Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures
• Structural Elements of Shallow Thermal Donors Formed in Nitrogen-Gas-Doped Silicon Crystals
• Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure

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