Structural Elements of Ultrashallow Thermal Donors Formed in Silicon Crystals

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概要

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• It has been reported by one of the authors (A.H.) of the present study that ultrashallow thermal donors (USTDs) with a hydrogen-like electronic structure are formed in C- and N-doped O-rich Si crystals at approximately 450–600 °C. In this paper, it is reported that there are two types of USTDs: USTDs comprising C, H, and O [D(C,H,O)s] and USTDs comprising C, N, and O [D(C,N,O)s]. The thermal stability of these two types of donors was different; D(C,N,O)s were stable at 600 °C, while D(C,H,O)s were not stable at approximately 600 °C.

• 2010-05-25

著者

• Awano Teruyoshi

  Department Of Applied Physics Faculty Of Engineering Tohoku Gakuin University

• Ohno Yutaka

  Institute For Materials Research Tohoku University

• Hara Akito

  Department of Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

• Akito Hara

  Department of Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

• Ichiro Yonenaga

  Institute of Material Research, Tohoku University, Sendai 980-8577, Japan

• Yutaka Ohno

  Institute of Material Research, Tohoku University, Sendai 980-8577, Japan

• Teruyoshi Awano

  Department of Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

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