Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation
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概要
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To evaluate the leakage current around through-silicon-vias (TSVs) in three-dimensional integrated circuits (3D-ICs), we propose the use of the IR-optical-beam-induced resistance change (IR-OBIRCH) method, which enables point detection of leakage currents. Leakage currents were detected directly from cross-sectional TSV samples to give more detailed information than can be obtained from conventional nondestructive top-view observations. Local leakage currents between Cu vias and the Si substrate resulted from poor sidewall coverage of the insulator, and were monitored with an image map and found to be 100 nA. Cross-sectional OBIRCH is suited for point leakage current measurements and for optimizing the metallization process of TSVs.
- 2012-05-25
著者
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Nakamura Tomoji
Fujitsu Lab. Ltd.
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KITADA Hideki
Fujitsu Laboratories Ltd
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Ohba Takayuki
The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Mizushima Yoriko
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Kitada Hideki
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Koshikawa Kazushige
Hamamatsu Photonics K.K., Hamamatsu 431-3196, Japan
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Suzuki Shinsuke
Hamamatsu Photonics K.K., Hamamatsu 431-3196, Japan
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Nakamura Tomoji
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Mizushima Yoriko
Fujitsu Laboratories Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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