Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(<Special Section>High-κ Gate Dielectrics)
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概要
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The characteristics of HfO_2 gate stacks, which consisted of the SiN layer deposited between the HfO_2 and poly-Si gate electrode and the SiGN interfacial layer were investigated. The SiN layer played important role to reduce the leakage current caused by the defect of the crystallized HfO_2. The SiN layer was also effective to achieve the prevention of the interfacial reaction, the suppression of dopant penetration. Furthermore, that stack structure indicated excellent TDDB reliability fabricated by conventional high temperature processes.
- 2004-01-01
著者
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SUGITA Yoshihiro
Fujitsu Laboratories Ltd.
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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Aoyama Takayuki
Fujitsu Labs. Ltd.
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Sugii Toshihiro
Fujitsu Ltd.
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Nakamura Tomoji
Fujitsu Ltd.
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IRINO Kiyoshi
FUJITSU LIMITED
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Irino Kiyoshi
Fujitsu Ltd.
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Nakamura Tomoji
Fujitsu Lab. Ltd.
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MORISAKI Yusuke
Fujitsu Ltd.
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Sugita Yoshihiro
Fujitsu Ltd.
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Morisaki Yusuke
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
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