Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology
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概要
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Diffusion behavior of Cu in Cu through-silicon-vias (TSVs) fabricated using low-temperature plasma enhanced chemical vapor deposition (LT-PECVD) has been evaluated. Silicon oxynitride (SiON) barrier films were formed by LT-PECVD at 150 °C. Cu diffusion rate was found to increase with decreasing film density. The critical density and thickness for prevention of Cu diffusion into Si substrate have been estimated. In case of a film with density ${>}60$% of the bulk value and/or thickness ${>}100$ nm, no change of electrical resistance for stacked wafers containing TSVs was observed after 1000 cycles of thermal stress. According to above results, SiON film formed at 150 °C can be used for the TSV process without any degradation of electrical characteristics and reliability, enabling a reduction in total process temperature in the wafer-on-wafer technology.
- 2011-05-25
著者
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Nakamura Tomoji
Fujitsu Lab. Ltd.
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KITADA Hideki
Fujitsu Laboratories Ltd
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NAKATA Yoshihiro
Fujitsu Laboratories Ltd.
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Ohba Takayuki
The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Mizushima Yoriko
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Maeda Nobuhide
The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Fujimoto Koji
Dai Nippon Printing, Kashiwa, Chiba 277-0871, Japan
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Mizushima Yoriko
Fujitsu Laboratories Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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