Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
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概要
- 論文の詳細を見る
Needle-like spikes penetrating into Si substrates have been detected by cross-sectional transmission electron microscopy (TEM) studies of Co silicide/Si interfaces. The spikes are crystalline CoSi_x and form at annealing temperatures of 400-425℃, when the transformations of Co→Co_2Si and Co_2Si→CoSi are both taking place. They sometimes extend to the p/n junction depth of 100 nm. During annealing at above 500℃, they become spherical and their density decreases. The temperature range in which CoSi_x spikes are formed and extend to near the junction depth corresponds well with that for the onset of junction leakage. Therefore, this supports the conclusion that Co silicide junction leakage is caused by such spike formation.
- 社団法人応用物理学会の論文
- 1997-10-15
著者
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TOMITA Hirofumi
Fujitsu Laboratories Ltd.
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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Nakamura Tomohiko
The Institute Of Scientific And Industrial Research Osaka University
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Komiya S
Fujitsu Laboratories Ltd.
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Komiya Satoshi
Fujitsu Laboratories Lid.
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Nakamura Tomoyuki
Fine Chemicals And Polymers Research Laboratory Nof Corporation
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TOMITA Hisashi
Sony Corporation Research Center
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Komiya S
Fujitsu Lab. Ltd. Atsugi Jpn
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Nakamura Takuya
The Faculty Of Engineering Saitama University
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Nakamura Tetsuro
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Nakamura T
Hokkaido Univ. Sapporo
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Sukegawa Takae
Micro Process Technology Development Department Fujitsu Ltd.
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Tomita H
Fujitsu Lab. Ltd. Kanagawa Jpn
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Nakamura Tomoji
Fujitsu Lab. Ltd.
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FUSHIDA Atsuo
Micro Process Technology Development Department, Fujitsu Ltd.
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GOTO Kenichi
Fujitsu Laboratories Ltd.
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Fushida Atsuo
Micro Process Technology Development Department Fujitsu Ltd.
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