Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-10-20
著者
-
TOMITA Hirofumi
Fujitsu Laboratories Ltd.
-
Sameshima T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Sameshima Toshiyuki
Sony Research Center
-
Sameshima Toshiyuki
Sony Corporation Research Center
-
USUI Setsuo
Sony Research Center
-
Usui Setsuo
Sony Corporation Research Center
-
Usui Setsuo
Research Center Sony Corporation
-
TOMITA Hisashi
Sony Corporation Research Center
-
Tomita H
Fujitsu Lab. Ltd. Kanagawa Jpn
関連論文
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
- Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors
- Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
- Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film
- Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
- In Situ Observation of Pulsed Laser Doping : Semiconductors and Semiconductor Devices
- Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique
- Crystalline Properties of Laser Crystallized Silicon Films
- The Gas Combustion of H_2 with N_2O Used for Rapid Thermal Annealing
- Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors
- Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors : Semiconductors
- Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H_2O Vapor
- Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
- Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
- Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
- Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
- Injection Luminescence in ZnTe Diodes
- Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique
- High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogernation
- Near Infrared Absorption in P-Doped ZnTe Crystals
- Near Infrared Absorption in Phosphorus Doped P-Type ZnTe
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
- Anomalous Variations in Conductivity of a-Si: H with Nitrogen Doping
- Behavior of Fluorine Atoms in a-Si: F: H Alloy Investigated by Gas Evolution and Infrared Absorption
- Photoluminescence Spectra of ZnTe with Anomalous Temperature Dependence
- Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's