XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's
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概要
- 論文の詳細を見る
Polycrystalline silicon thin-film transistors (poly-Si TFT's) with a high carrier mobility were fabricated at low processing temperatures of 150 and 250°C. A hydrogenated amorphous silicon (a-Si:H) film was successfully crystallized at room temperature by multistep irradiation of XeCl-308 nm excimer laser pulses without explosive evaporation of hydrogen. The poly-Si TFT's fabricated by the 250°C process had a carrier mobility of 54 cm2/V$\cdot$s and a low potential barrier height at a grain boundary of 0.01 eV.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Sameshima Toshiyuki
Sony Corporation Research Center
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HARA Masaki
Sony Research Center
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Usui Setsuo
Sony Corporation Research Center
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Sameshima Toshiyuki
Sony Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240
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Usui Setsuo
Sony Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240
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