Anomalous Variations in Conductivity of a-Si: H with Nitrogen Doping
スポンサーリンク
概要
- 論文の詳細を見る
Nitrogen was doped into discharge-produced a-Si: H during deposition in a SiH_4/N_2/Ar or in a SiH_4/NH_3/Ar mixture. It was found that dark conductivity and photoconductivity first increase as the doping gas ratio increases, then decrease, then increase again, and finally decrease again. This anomalous behavior is distinct from that of phosphorous-doped a-Si: H, in which dark conductivity and photoconductivity increase monotonically as PH_3/SiH_4 increases. The phenomenon is discussed using a tentative model of the variation in the network structure of a-Si_<1-x>N_x: H with nitrogen incorporation.
- 社団法人応用物理学会の論文
- 1982-08-20
著者
-
Usui Setsuo
Sony Corporation Research Center
-
KIKUCHI Makoto
SONY Corporation Research Center
-
Noguchi Takashi
Sony Corporation Research Center:(present Address) Sony Corp. Solid State Systems Consumer Camera Di
-
SAWADA Akashi
Sony Corporation Research Center
-
KANOH Yasuo
Sony Corporation Research Center
関連論文
- Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
- Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film
- Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
- In Situ Observation of Pulsed Laser Doping : Semiconductors and Semiconductor Devices
- Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique
- Improved Characteristics of p^+-n Junctions formed by Excimer Laser Annealing with Low Temperature Pre-Annealing
- A Super Thin Film Transistor in Advanced Poly Si Films
- Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
- Polysilicon Super-Thin-Film Transistor (SFT)
- Injection Luminescence in ZnTe Diodes
- Grain Growth and Conductive Characteristics of Super Thin Polysilicon Films by Oxidation
- A Simplified Current Oscillation Model in the SOGICON Device
- High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogernation
- Near Infrared Absorption in P-Doped ZnTe Crystals
- Near Infrared Absorption in Phosphorus Doped P-Type ZnTe
- Anomalous Variations in Conductivity of a-Si: H with Nitrogen Doping
- Behavior of Fluorine Atoms in a-Si: F: H Alloy Investigated by Gas Evolution and Infrared Absorption
- Photoluminescence Spectra of ZnTe with Anomalous Temperature Dependence
- Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's