Behavior of Fluorine Atoms in a-Si: F: H Alloy Investigated by Gas Evolution and Infrared Absorption
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概要
- 論文の詳細を見る
Four a-Si: F: H alloys were prepared in SiF_4/SiH_4/Ar, SiF_4/SiH_4/H_2, SiF_4/H_2/Ar and SiF_4/H_2 mixtures using an inductively-coupled glow discharge technique. A mass spectroscopic analyzer was used to observe gas evolution. In all films, a small amount of SiF_4 gas evolved at 120℃, which is lower than the deposition temperature. At 300℃ hydrogen evolved, just as has been reported in amorphous hydrogenated film. At 750℃ a larger amount of SiF_4 gas burst from the film. Infrared transmission results indicate that ≡SiF and =SiF_2 in the film change into SiF_4 when the film is annealed at a temperature higher than 400℃.
- 社団法人応用物理学会の論文
- 1981-02-05
著者
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Usui Setsuo
Sony Corporation Research Center
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KIKUCHI Makoto
SONY Corporation Research Center
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SAWADA Akashi
Sony Corporation Research Center
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