Noguchi Takashi | Sony Corporation Research Center:(present Address) Sony Corp. Solid State Systems Consumer Camera Di

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概要

• 同名の論文著者
• Sony Corporation Research Center:(present Address) Sony Corp. Solid State Systems Consumer Camera Diの論文著者

関連著者

• Noguchi Takashi

  Sony Corporation Research Center:(present Address) Sony Corp. Solid State Systems Consumer Camera Di

• Hayashi Hisao

  Sony Corp. Research And Development Dept. Semiconductor Group

• NOGUCHI Takashi

  Sony SC ULSI R&D Laboratories

• OHSHIMA Takeshi

  Japan Atomic Energy Research Institute

• Hayashi Hisao

  Department Of Medicine Faculty Or Pharmaceutical Sciences Hokuriku University

• Noguchi T

  Sony Corp. Yokohama Jpn

• Ohshima T

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• OHSHIMA Takefumi

  SONY Corp. Semiconductor Group

• Hayashi H

  Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac

• Usui Setsuo

  Sony Corporation Research Center

• Suzuki Toshiharu

  Sony Sc Ulsi R&d Laboratories

• Hayashi Hisao

  Sony Corp. Semiconductor Group

• Yamamoto H

  Sharp Corp. Nara Jpn

• Suzuki T

  Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation

• TSUKAMOTO Hironori

  Sony SC ULSI R&D Laboratories

• YAMAMOTO Hiroshi

  Sony SC ULSI R&D Laboratories

• MASUYA Haruko

  Sony SC ULSI R&D Laboratories

• Masuya H

  Sony Corp. Kanagawa Jpn

• KIKUCHI Makoto

  SONY Corporation Research Center

• Tsukamoto Hironori

  Sony Sc Ulsi R&d Laboratories:(present Address) Material Research Division Sony Corporation Rese

• SAWADA Akashi

  Sony Corporation Research Center

• KANOH Yasuo

  Sony Corporation Research Center

• Yamamoto Hiroshi

  Sony Sc Ulsi R&d Laboratories

• Noguchi Takashi

  Sony Sc Ulsi R&d Laboratories

• MASUYA Haruko

  Sony SC ULSI R&D Laboratories

• Masuya Haruko

  Sony Corporation Research Center, 174 Fujitsukacho, Hodogayaku, Yokohama 240

• OSHIMA Takefumi

  SONY Corp. Semiconductor Group

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著作論文

• Improved Characteristics of p^+-n Junctions formed by Excimer Laser Annealing with Low Temperature Pre-Annealing
• A Super Thin Film Transistor in Advanced Poly Si Films
• Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
• Polysilicon Super-Thin-Film Transistor (SFT)
• Grain Growth and Conductive Characteristics of Super Thin Polysilicon Films by Oxidation
• Anomalous Variations in Conductivity of a-Si: H with Nitrogen Doping

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