Injection Luminescence in ZnTe Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1964-07-15
著者
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USUI Setsuo
Sony Research Center
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Usui Setsuo
Sony Corporation Research Center
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Usui Setsuo
Sony Corporation Research Laboratory
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WATANABE Naozo
Sony Corporation Research Center
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KANAI Yasuo
Sony Corporation Research Laboratory
関連論文
- Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
- Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film
- Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
- In Situ Observation of Pulsed Laser Doping : Semiconductors and Semiconductor Devices
- Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique
- Formation of p^+-layer in GaAs by dual implantation of Zn and As
- Redistrubution of Zn Implanted into GaAs
- Injection Luminescence in ZnTe Diodes
- Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique
- High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogernation
- Radiation Annealing of GaAs Implanted with Si
- An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_As
- Forward and Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current : B-3: LASER
- Semi-Sealing Capless Anneal of GaAs
- Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- Near Infrared Absorption in P-Doped ZnTe Crystals
- Near Infrared Absorption in Phosphorus Doped P-Type ZnTe
- Optical Absorption and Conduction Due to Co^ in ZnO Crystals
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic Pressure
- Infrared Absorption in P-Type Semiconductors with Zincblebde Structure : Application to Zinc Telluride
- Dielectric Constant of PbTe
- Anomalous Variations in Conductivity of a-Si: H with Nitrogen Doping
- Behavior of Fluorine Atoms in a-Si: F: H Alloy Investigated by Gas Evolution and Infrared Absorption
- Photoluminescence Spectra of ZnTe with Anomalous Temperature Dependence
- Dielectric Constant of PbTe
- Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser
- Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp
- Helicon Waves in PbTe
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's