Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
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概要
- 論文の詳細を見る
AlAs/GaAs monolayer scale superlattices were grown by atmospheric pressure-MOCVD and the layer structure was observed with a transmission electron microscope (TEM). Clear stripes with high contrast in the TEM lattice image indicated ultra-abrupt hetero-interfaces. The TEM image and the transmission electron diffraction pattern of the superlattices showed that the hetero-interface was nearly free of island-like structure even in such a very short period superlattice as (AlAs)_5-(GaAs)_2.
- 社団法人応用物理学会の論文
- 1985-02-20
著者
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KAJIWARA Kazuo
Sony Corporation
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WATANABE Naozo
Sony Corporation Research Center
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Kaneko Kunio
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Frontier Science Laboratories
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Kajiwara Kazuo
Sony Corporation Research Center
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