Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-11-15

著者

• Kawai H

  Sony Corporation Research Center

• Kawai Hiroji

  Sony Corporation Research Center

• Kawai Hiroji

  Sony Corporation Frontier Science Laboratories

• Imanaga Syunji

  Sony Corporation Research Center, Yokohama Technology Center

• Imanaga Syunji

  Sony Corporation Research Center

• Imanaga Syunji

  Sony Corporation Frontier Science Laboratories

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• InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
• The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
• The Electronic Structure of One-Dimensional (1-D), 2-D, and 3-D Silicon Clusters
• Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors : I. Mn, (Cu, Al), (Ag, Al) and (Au, Al) Doped Phosphors
• Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu, Al Phosphor
• Concentration Dependence of Green-Cu Luminescence in ZnS : Cu, Al
• Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. : II. Al and Te Doped Phosphors
• Performance of AIN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation
• Effects of Fluxes on Particle Growth of ZnS Phosphor
• Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
• Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs
• Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors
• High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
• Luminescence Saturation Effects in Y_2O_2S : Eu Phosphor
• Raman Spectra for Eu Doped Ln_2O_2S Phosphors
• Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode

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