Raman Spectra for Eu Doped Ln_2O_2S Phosphors
スポンサーリンク
概要
- 論文の詳細を見る
Raman spectra for Ln.0.S: Eu (Ln=Lu, Y, Gd and La) have been measuredat room temperature. The observed four Raman lines are divided into low andhigh-frequency groups, each consisting of A[. and E. modes in representationsof D.. crystal point group. The high-frequency lines shift toward low frequencywith increasing unit cell volume, and the low-frequency lines decrease in frequencywith increasing crystal mass. The Raman active modes are assigned as evenvibrations of the Ln.0. parallelogram in the unit cell on the basis of the factorgroup analysis, The Raman lines shift continuously with increasing Eu concentra-tion in Y.(j .,Eu.,0.S and no additional mode appears. This fact indicatesthat the mixed oxysulfide crystal is not a mixture of the lattices of its components,but a unique lattice.
- 社団法人日本物理学会の論文
- 1979-06-15
著者
-
YOKONO Shigeru
Sony Corporation Research Center
-
HOSHINA Teruhiko
Sony Corporation Research Center
-
Imanaga Syunji
Sony Corporation Research Center
-
Imanaga Syunji
Sony Corporation Frontier Science Laboratories
関連論文
- Electron Spin Resonance of Photosensitive Fe^ Centers in CdSe
- Electron Spin Resonance of Co^ in CdSe
- Phonon Sidebands in Emission and Excitation Spectra for Ce^ in CaS
- The Electronic Structure of One-Dimensional (1-D), 2-D, and 3-D Silicon Clusters
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors : I. Mn, (Cu, Al), (Ag, Al) and (Au, Al) Doped Phosphors
- Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu, Al Phosphor
- Concentration Dependence of Green-Cu Luminescence in ZnS : Cu, Al
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. : II. Al and Te Doped Phosphors
- Performance of AIN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation
- Effects of Fluxes on Particle Growth of ZnS Phosphor
- Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
- Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs
- Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors
- Luminescence Saturation Effects in Y_2O_2S : Eu Phosphor
- Raman Spectra for Eu Doped Ln_2O_2S Phosphors
- 5d→4f Radiative Transition Probabilities of Ce^ and Eu^ in Crystals
- Luminescent Properties of Tb^ in Oxygen-Dominated Compounds
- Photosensitive Spin Resonance of Fe^ in CdS
- Electrical Properties of Eyaporated Single-Crystal Thin Films of n-Type PbTe
- 4f-5d Transitions of Tb^ and Ce^ in Calcite-Type MBO_3 (M=Sc, In and Lu)
- Electron Spin Resonance of Fe^-Associated Centers in Cadmium Selenide
- Electron Spin Resonance of Photosensitive Centers in Ag-Doped CdS
- Radiative Transition Probabilities in Tb^ and Fluorescence Colors Producible by Tb^-Activated Phosphors
- 4f-5d Transition of Tb^ and Ce in MPO_4(M=Sc, Y and Lu)
- Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode
- Electron Spin Resonance Studies of Trapped Electrons in CdS