Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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Kawai Hiroji
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Frontier Science Laboratories
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Imanaga Syunji
Sony Corporation Research Center, Yokohama Technology Center
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Imanaga Syunji
Sony Corporation Research Center
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Imanaga Syunji
Sony Corporation Frontier Science Laboratories
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