Kawai Hiroji | Sony Corporation Frontier Science Laboratories

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著作論文

Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition
Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition (Special Issue on Heterostructure Electron Devices)
Enhancement of Electron Density in the Base of GaSb/InAs Hot Electron Transistor
InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors : I. Mn, (Cu, Al), (Ag, Al) and (Au, Al) Doped Phosphors
Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu, Al Phosphor
Concentration Dependence of Green-Cu Luminescence in ZnS : Cu, Al
Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. : II. Al and Te Doped Phosphors
Performance of AIN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation
Effects of Fluxes on Particle Growth of ZnS Phosphor
Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs
Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors
High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode

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