Kaneko Kunio | Sony Corporation Research Center
スポンサーリンク
概要
関連著者
-
Kaneko Kunio
Sony Corporation Research Center
-
Kawai Hiroji
Sony Corporation Frontier Science Laboratories
-
MORI Yoshifumi
Sony Corporation Research Center
-
WATANABE Naozo
Sony Corporation Research Center
-
Kawai Hiroji
Sony Corporation Research Center
-
Kumagai Osamu
Sony Corporation Research Center
-
Matsuda Osamu
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
-
Matsuda Osamu
Sony Corporation Research Center
-
KAJIWARA Kazuo
Sony Corporation
-
Otsuka Eizo
Department of Applied Physics, Osaka University
-
OHYAMA Tyuzi
Department of Physics, Graduate School of Science, Osaka University
-
Ikeda Masao
Sony Corporation Research Center
-
Ishikawa Hideto
Sony Corporation Research Center
-
KASAHARA Jiro
Sony Corporation Research Center
-
Kaneko K
Japan Sci. And Technol. Corp. Nagoya Jpn
-
Kaneko Kunio
Sony Research Center
-
Ohyama Tyuzi
Department Of Physics College Of General Education Osaka University
-
Kamada Mikio
Sony Corporation Research Center
-
Kawai Hiroji
Sony Research Center
-
Matsuda O
Research Center Sony Corporation
-
Kasahara Jiro
Sony Corporation Materials Laboratory
-
Kajiwara Kazuo
Sony Corporation Research Center
-
HONDA Masumi
Sony Corporation Research Center
-
ISAWA Nobuyuki
Sony Corporation, Semiconductor Products Div.
-
SAKAMOTO Masamichi
Sony Corporation Semiconductor Group, Atsugi Plant
-
OKADA Tsunekazu
Sony Corporation Semiconductor Group, Atsugi Plant
-
DOSEN Masashi
SONY CORPORATION Research Center
-
Kumagai O
Sony Corporation Research Center
-
Isawa Nobuyuki
Sony Corporation Semiconductor Products Div.
-
Okada Tsunekazu
Sony Corporation Semiconductor Group Atsugi Plant
-
Sakamoto Masamichi
Sony Corporation Semiconductor Group Atsugi Plant
-
Matsuda Osamu
Sony Research Center
-
Otsuka Eizo
Department Of Applied Physics Osaka City University
著作論文
- Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Residual Donor Impurities in MO-CVD Gallium Arsenide
- Degradation of GaP Green LEDs
- Degradation of GaP Red LED's Depending on the Donor Concentration in the n-Region
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- Fitting Analysis of TSCAP Spectrum
- The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
- DLTS Study of Cr Trap Density in Thermally Converted Semi-Insulating GaAs
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition