Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-01
著者
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Ishikawa Hideto
Sony Corporation Research Center
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Kaneko K
Japan Sci. And Technol. Corp. Nagoya Jpn
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Kaneko Kunio
Sony Corporation Research Center
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Kamada Mikio
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Frontier Science Laboratories
関連論文
- Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition
- Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition (Special Issue on Heterostructure Electron Devices)
- Enhancement of Electron Density in the Base of GaSb/InAs Hot Electron Transistor
- InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Residual Donor Impurities in MO-CVD Gallium Arsenide
- Degradation of GaP Green LEDs
- Degradation of GaP Red LED's Depending on the Donor Concentration in the n-Region
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- Fitting Analysis of TSCAP Spectrum
- The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
- DLTS Study of Cr Trap Density in Thermally Converted Semi-Insulating GaAs
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors : I. Mn, (Cu, Al), (Ag, Al) and (Au, Al) Doped Phosphors
- Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu, Al Phosphor
- Concentration Dependence of Green-Cu Luminescence in ZnS : Cu, Al
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. : II. Al and Te Doped Phosphors
- Performance of AIN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation
- Effects of Fluxes on Particle Growth of ZnS Phosphor
- Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
- Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs
- Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors
- High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
- Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode