High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
High Al-content multiple quantum well heterostructure lasers, consisting of five (Al_<0.14>Ga_<0.86>)As wells 150 Å thick separated by four (Al_<0.35>Ga_<0.65>)As barriers 40 Å thick have been grown by metalorganic chemical vapor deposition (MOCVD) in an atmospheric pressure. The laser with a self aligned narrow stripe geometry is formed by the two step epitaxial technique. The room temperature CW threshold current for a device 250 μm long is typically 50 mA, which is 30% less than that of a conventional DH laser of the same geometry. Emission wavelength is 782 nm and the characteristic temperature T_O is 232 K.
- 社団法人応用物理学会の論文
- 1983-11-20
著者
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Kaneko Kunio
Sony Corporation Research Center
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Kaneko Kunio
Sony Research Center
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Kawai Hiroji
Sony Corporation Frontier Science Laboratories
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Kawai Hiroji
Sony Research Center
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Matsuda Osamu
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
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Matsuda Osamu
Sony Corporation Research Center
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Matsuda Osamu
Sony Research Center
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