Residual Donor Impurities in MO-CVD Gallium Arsenide
スポンサーリンク
概要
- 論文の詳細を見る
Residual donor species as well as their concentrations in undoped MO-CVD GaAs have been investigated using far-infrared laser magneto-optics with intrinsic photoexcitation. Both donor and acceptor concentrations have been precisely determined for various samples grown under different conditions. It has been found that the main donor species in MO-CVD GaAs are Si and Ge, the relative concentrations of which depend on the partial pressure of AsH_3.
- 社団法人応用物理学会の論文
- 1982-09-20
著者
-
Otsuka Eizo
Department of Applied Physics, Osaka University
-
OHYAMA Tyuzi
Department of Physics, Graduate School of Science, Osaka University
-
MORI Yoshifumi
Sony Corporation Research Center
-
Kaneko Kunio
Sony Corporation Research Center
-
Ohyama Tyuzi
Department Of Physics College Of General Education Osaka University
-
Matsuda O
Research Center Sony Corporation
-
Matsuda Osamu
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
-
Matsuda Osamu
Sony Corporation Research Center
-
Otsuka Eizo
Department Of Applied Physics Osaka City University
関連論文
- Production of Transgenic Japonica Rice (Oryza sativa) Cultivar, Taichung 65, by the Agrobacterium-Mediated Method
- Study on Phase Transition of C_ through Fourier-Transform Infrared Spectroscopic Measurements
- Nuclear Multi-Relaxation at Low Magnetic Fields
- Optically Detected Far-Infrared Magnetoabsorption in InGaAs
- Closed-System, Automated Continuous Peritoneal Dialysis in Severe Acute Pancreatitis
- Clinical Significance of Renal Hemodynamics in Severe Congestive Heart Failure: Responsiveness to Ultrafiltration Therapies : SYMPOSIUM ON PATHOPHYSIOLOGY AND SEVERITY OF HEART FAILURE IN THE ASPECT OF CIRCULATORY INSUFFICIENCY
- Derivation of Analytical Solution for Confocal Push-Pull Signals and Improved Confocal Push-Pull Detection Method Using Signal Processing
- Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium II. : Millimeter-Wave Studies on Transport Phenomena
- Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium I. : Photoluminescence Studies on Rrcombination Dynamics
- Suppression of Electron-Hole Droplet Transport by Deep Impurities in Germanium
- Magneto-Acoustical Properties of a Large Electron-Hole Drop in Stressed Germanium
- Dynamics and Kinetics of Carrier System in Photoexcited Ge and Si Observed by Optically Detected Cyclotron Resonance
- Resonant-Photoelectromagnetic Effects in Far-Infrared Regions for Compound Semiconductors
- Internal Stark Effect by Inhomogeneous Electric Fields in Highly Compensated p-InSb
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- AlGaInP Visible Semiconductor Lasers : COMPONENTS
- Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition
- Linewidth Study of Electric Dipole induced Spin Resonance in Uniaxially Stressed n-InSb for Far-Infrared Region: Theoretical : Condensed Matter: Electronic Properties, etc.
- Linewidth Study of Electric Dipole Induced Spin Resonance in Uniaxially Stressed n-InSb in Far Infrared Regions: Experimental : Condensed Matter: Electronic Properties, etc.
- Microwave Studies of Electron Scattering by Isolated Interstitial Oxygen and Oxygen Complex in Silicon
- Effect of Impact Ionization on Photoluminescence in Single- and Polycrystalline InP
- Optically Detected Cyclotron Resonance of Exciton and Electron-Hole Droplet Systems in Pure Germanium
- High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes
- Instability of Cl-Related Deep Defects in ZnSe
- Cyclotron Resonance Stydy of Ionized Impurity Scattering in Germanium with H_2O Laser for Carrier Excitation
- Far-Infrared Resonant Faraday Effect in Semiconductors(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Far-Infrared Resonant Faraday Effect in Semiconductors
- Studies of Excited States for Shallow Donors in Magnetic Field on Bulk n-InP (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Optically Detected Cyclotron Resonance in CdTe
- Broadening of Exciton Luminescence Line in Modified CdTe/ZnTe Multi-Quantum Wells
- Far-Infrared Magneto-Absorption of Bound Excitons in Beryllium Doped Germanium
- Shallow Positive Acceptor in Germanium Doped with Deep Zinc Impurity
- Correspondence between Photoluminescence and Cyclotron Resonance for Stressed Zn-Doped Ge
- Effects of Deep Impurities on Photoluminescence from Electron-Hole Droplets in Germanium
- A^+ Center and A^+ Related Complex in Zinc Doped Germanium
- InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Electron Scattering by Thermal Acceptors in Germanium
- Cyclotron Resonance of Thermally Quenched Germanium
- High Electron Mobility in p-Type III-V Compound Semiconductors
- Electron Scattering by Impurities in Semiconductors
- Cyclotron Resonance of Germanium-Silicon Alloys
- Cyclotron Resonance of Tin-Doped Germanium
- Quantum Transport Study of Silicon and Germanium by 4-mm Wave Cyclotron Resonance below 1°K
- Impurity-Assisted Intervalley Electron Scattering in Boron-Doped Silicon
- Cyclotron Resonance of Doped Silicon
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- Far-Infrared Magnetooptical Study of Semi-Insulating Gallium Arsenide : A New Model for the Metastable State of EL2
- Far-Infrared Magnetoplasma Absorption due to Electron-Hole Drops in Germanium
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Residual Donor Impurities in MO-CVD Gallium Arsenide
- Degradation of GaP Green LEDs
- Degradation of GaP Red LED's Depending on the Donor Concentration in the n-Region
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- Fitting Analysis of TSCAP Spectrum
- The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
- DLTS Study of Cr Trap Density in Thermally Converted Semi-Insulating GaAs
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
- An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_As
- Influence of Interface Barrier on Lateral Transport Properties for Metal/Semiconductor Systems
- Structured Photoluminescence Spectrum in Laterally Anodized Porous Silicon
- New Laser Emission from D_2O Vapor
- Direct Evidence for a Charge-Controlled Optical Quernching of EL2 Centers in Semi-Insulating GaAs
- Line-Width of Quantum Limit Cyclotron Resonance.II.Impurity and Carrier-Carrier Scatterings in Ge,InSb and GaAs
- Line-Width of Quantum Limit Cyclotron Resonance.I.Phonon Scatterings in Ge,Si,CdS and InSb
- Electron Scattering in GaAs at the Quantum Limit
- Millimeter and Submillimeter Cyclotron Resonance Study of High-Purity ZnSe
- Cyclotron Resonance of Photoexcited Holes in High Quality ZnSe
- Photoluminescence Spectra of Silver-Doped ZnSe Grown by MBE
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
- Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation
- Laser Cyclotron Resonance in n-Type Indium Antimonide under the Pulsed Electric Field
- Electron Scattering by Mu Impurities in Si Detected by Cyclotron Resonance Measurement
- Heterointerface Field Effect Transistor with 200 A-Long Gate : Semiconductors and Semiconductor Devices
- Photoluminescence of Bound Exciton and Bound-Double-Exciton Complex in Zinc Doped Germanium
- Donor-Like Zeeman Absorption of Exciton Bound to Zinc Acceptor in Germanium
- Carrier Lifetime Determination through Stress-Associated Cyclotron Resonance
- Far-Infrared Magneto-Optical Study of Photoexcited Indium Antimonide. : II. Spin Dependent Properties
- Weak Localization and Correlation Effects in Indium-Tin-Oxide Films.II.Two-to-Three Dimensional Transition and Competition between Localization and Superconductivity
- Electron Distribution around a Large Electron-Hole Drop in Germanium
- Donor to Acceptor Electron Transfer in Germanium at Low Temperatures
- New Cyclotron Resonance Absorption Peaks in Germanium under High Excitation
- Time-Resolved Cyclotron Resonance Analysis of Electron-Exciton Interaction in Silicon
- Effects of Positively Charged Acceptor Centers on Cyclotron Resonance in p-Type Silicon
- Screening of Hot Electron Energy Relaxation in a Semiconductor by Shallow Impurities
- Far-Infrared Magneto-Absorption of Bound Excitons in Zinc Doped Germanium
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures. : I. Localization of Carriers and Metallic Impurity Conduction under Zero and Weak Magnetic Fields
- Donor Deionization and Impurity Conduction in Low Concentration n-Type Indium Antimonide
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures : II. Magnetic Field-Induced Metal-Nonmetal Transition
- Dynamical Properties of a Large Electron-Hole Drop in Germanium. I. Kinetics of a Strain-Confined Large Electron-Hole Drop and Its Clinging Exciton System
- Dynamical Behaviour of Photoexcited Electron System in Gallium Arsenide
- Dynamical Properties of a Large Electron-Hole Drop in Germanium. II. Temperature Dependence of the Carrier Relaxation Rate and of the Pair Density in the Large Drop
- Direct Observation of Impact Ionization and Hot Electron Effects in GaAs
- Weak Localization and Correlation Effects of Two Dimensional Electrons in Indium-Tin-Oxide Films
- Far-Infrared Magneto-Optical Study of Photoexcited Indium Antimonide. : I. General Characteristics
- Optically Detected Cyclotron Resonance in CdTe
- Light-Induced Degradation and Recovery of Visible Photoluminescence in Porous Silicon
- Far-Infrared Optically Detected Cyclotron Resonance in GaAs Layer Grown by Molecular Beam Epitaxy