Screening of Hot Electron Energy Relaxation in a Semiconductor by Shallow Impurities
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概要
- 論文の詳細を見る
The energy relaxation process of the photoexcited hot electron system in InSb is investigated at 4.2 K by the time-resolved cyclotron resonance method at the far-infrared laser wavelength of 84 μm. It is found that the electron temperature, at first more than 40 K, cools down at a much slower rate than predictable by electron-phonon interaction. The screening by shallow donor impurities is stressed.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Otsuka Eizo
Department of Applied Physics, Osaka University
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Ohyama Tyuzi
Department Of Physics College Of General Education Osaka University
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Fujii Kenichi
Department Of Physics College Of General Education Osaka University
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Fujii Kenichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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