Determination of Deformation Potential Constants from the Electron Cyclotron Rresonance in Germanium and Silicon
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概要
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Precise determinations of the deformation potential constants Ξ_u and Ξ_d of the conduction band edge are carried out at liquid helium temperature both for germanium and for silicon by means of electron cyclotron resonance. Ξ_u is determinable from the resonance intensity measurements under the application of uniaxial stress, while Ξ_d from the anisotropy of linewidth for pure specimens with the help of the already obtained value of Ξ_u. The Herring-Vogt equation under the classical condition k_BT/ℏω>1 is used for deriving Ξ_d. An extreme care must be taken if one uses the measured absolute linewidth to get Ξ_u and Ξ_d. The obtained values are Ξ_u=19.3±0.7 eV and Ξ_d=-12.3±0.5 eV for Ge, while Ξ_u=9.0±0.4 eV and Ξ_d=-6.0±0.8 eV for Si.
- 社団法人日本物理学会の論文
- 1970-11-05
著者
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Murase Kazuo
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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ENJOUJI Katsuhisa
Department of Physics, Osaka Universit
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Enjouji Katsuhisa
Department Of Physics Osaka Universit:(present Address) Nippon Sheet Glass Co. Ltd.
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