Impurity-Assisted Intervalley Electron Scattering of Germanium and Silicon under Uniaxial Compression
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概要
- 論文の詳細を見る
Application of uniaxial stress along a particular crystallographic axis of a many-valley semiconductor causes up- and down-valleys in the momentum-energy space for electrons. The cyclotron resonance linewidth of the down-valley signals are broadened as a function of stress for certain doped germanium and silicon crystals. The electron transferred from up- to down- valley has an extra kinetic energy at the down-valley, corresponding to the valley energy difference, and the observed broadening is ascribed to the raised electron temperature there. From the broadening of the down-valley signal and observed down-to-up electron population ratio, the impurity-assisted intervalley scattering frequency is estimated for Ge/Ga, Ge/In and Si/P at 4.2°K. The magnitude is 1/20∼1/30 of the overall impurity scattering. There is an indication that it is strongly dependent of temperature.
- 社団法人日本物理学会の論文
- 1969-02-05
著者
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Murase Kazuo
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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Otsuka Eizo
Department Of Physics Osaka University:department Of Physics College Of General Education Osaka Univ
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