Impurity-Assisted Intervalley Electron Scattering in Boron-Doped Silicon
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概要
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Intervalley electron scattering rate in a boron-doped silicon is derived through a stress-associated cyclotron resonance at 2.2°K. The method of analysis is quite complementary to that introduced in an earlier paper. It combines the down-to-up electron valley population ratio with the known value of the recombination time. The boron-assisted intervalley scattering rate is not affected by stress in the range of 0.5∼3.0×10^6g・cm^<-2>.
- 社団法人日本物理学会の論文
- 1969-06-05
著者
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MURASE Kazuo
Department of Physics,Faculty of Science,Osaka University
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Otsuka Eizo
Department of Applied Physics, Osaka University
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OHYAMA Tyuzi
Department of Physics, Graduate School of Science, Osaka University
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Murase Kazuo
Department Of Physics Osaka University
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Murase Kazuo
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Otsuka Eizo
Department Of Physics Osaka University
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Ohyama Tyuzi
Department Of Physics Osaka University
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Ohyama Tyuzi
Department Of Physics College Of General Education Osaka University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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