High Electron Mobility in p-Type III-V Compound Semiconductors
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概要
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Electron scattering by impurities in degenerate semiconductors is calculated by a simplified square well-or-hump potential model. For various III-V compound semiconductors with large hole-to-electron mass ratios m_h/m_e, it is found that the scattering cross-section by a screened acceptor is much smaller than that by a screened donor. The donor-to-acceptor ratio of the cross-sections σ_D/σ_A amounts to 550 in InSb at a carrier density of 10^<18> cm^<-3>. A simple relation σ_D/σ_A∝(m_h/m_e)^2 exists over the available III-V compounds. The absolute magnitude of the cross-section is also discussed in conjunction with the pseudo-neutral impurity scattering model.
- 社団法人応用物理学会の論文
- 1983-02-20
著者
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Otsuka Eizo
Department of Applied Physics, Osaka University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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