Donor Deionization and Impurity Conduction in Low Concentration n-Type Indium Antimonide
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1972-11-05
著者
-
KOBAYASHI Keisuke
Department of Materials Science and Engineering, Kyoto University
-
Otsuka Eizo
Department of Applied Physics, Osaka University
-
Ishida Shuichi
Department Of Physics Osaka University
-
Ishida Shuichi
Department Of Physics Faculty Of Science Osaka University
-
Otsuka Eizo
Department Of Applied Physics Osaka City University
関連論文
- Hard X-ray Photoemission Spectroscopy of Temperature-Induced Valence Transition in EuNi_2(Si_Ge)_2(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Study on Phase Transition of C_ through Fourier-Transform Infrared Spectroscopic Measurements
- Nuclear Multi-Relaxation at Low Magnetic Fields
- Numerical Validation of the Theory of Coupled Reactors for the Heavy Water Critical Assembly DCA
- Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium II. : Millimeter-Wave Studies on Transport Phenomena
- Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium I. : Photoluminescence Studies on Rrcombination Dynamics
- Suppression of Electron-Hole Droplet Transport by Deep Impurities in Germanium
- Magneto-Acoustical Properties of a Large Electron-Hole Drop in Stressed Germanium
- Dynamics and Kinetics of Carrier System in Photoexcited Ge and Si Observed by Optically Detected Cyclotron Resonance
- False-positive magnetic resonance imaging skeletal survey in a patient with sporadic hypophosphatemic osteomalacia
- Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAs
- Determination of Physical Parameters of the Anderson Localization in Metallic n-InSb
- Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAs
- Microwave Studies of Electron Scattering by Isolated Interstitial Oxygen and Oxygen Complex in Silicon
- Effect of Impact Ionization on Photoluminescence in Single- and Polycrystalline InP
- Optically Detected Cyclotron Resonance of Exciton and Electron-Hole Droplet Systems in Pure Germanium
- Photoprotons from Silicon and Phosphorus
- Fine Structures of Photoprotons from Si^
- Cyclotron Resonance Stydy of Ionized Impurity Scattering in Germanium with H_2O Laser for Carrier Excitation
- Broadening of Exciton Luminescence Line in Modified CdTe/ZnTe Multi-Quantum Wells
- Far-Infrared Magneto-Absorption of Bound Excitons in Beryllium Doped Germanium
- Shallow Positive Acceptor in Germanium Doped with Deep Zinc Impurity
- Correspondence between Photoluminescence and Cyclotron Resonance for Stressed Zn-Doped Ge
- Effects of Deep Impurities on Photoluminescence from Electron-Hole Droplets in Germanium
- A^+ Center and A^+ Related Complex in Zinc Doped Germanium
- Electron Scattering by Thermal Acceptors in Germanium
- Cyclotron Resonance of Thermally Quenched Germanium
- High Electron Mobility in p-Type III-V Compound Semiconductors
- Electron Scattering by Impurities in Semiconductors
- Cyclotron Resonance of Germanium-Silicon Alloys
- Cyclotron Resonance of Tin-Doped Germanium
- Quantum Transport Study of Silicon and Germanium by 4-mm Wave Cyclotron Resonance below 1°K
- Impurity-Assisted Intervalley Electron Scattering in Boron-Doped Silicon
- Cyclotron Resonance of Doped Silicon
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- Far-Infrared Magnetooptical Study of Semi-Insulating Gallium Arsenide : A New Model for the Metastable State of EL2
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Far-Infrared Magnetoplasma Absorption due to Electron-Hole Drops in Germanium
- Residual Donor Impurities in MO-CVD Gallium Arsenide
- Influence of Interface Barrier on Lateral Transport Properties for Metal/Semiconductor Systems
- Direct Evidence for a Charge-Controlled Optical Quernching of EL2 Centers in Semi-Insulating GaAs
- Line-Width of Quantum Limit Cyclotron Resonance.II.Impurity and Carrier-Carrier Scatterings in Ge,InSb and GaAs
- Line-Width of Quantum Limit Cyclotron Resonance.I.Phonon Scatterings in Ge,Si,CdS and InSb
- Electron Scattering in GaAs at the Quantum Limit
- Millimeter and Submillimeter Cyclotron Resonance Study of High-Purity ZnSe
- Cyclotron Resonance of Photoexcited Holes in High Quality ZnSe
- Laser Cyclotron Resonance in n-Type Indium Antimonide under the Pulsed Electric Field
- Photoluminescence of Bound Exciton and Bound-Double-Exciton Complex in Zinc Doped Germanium
- Donor-Like Zeeman Absorption of Exciton Bound to Zinc Acceptor in Germanium
- Carrier Lifetime Determination through Stress-Associated Cyclotron Resonance
- Far-Infrared Magneto-Optical Study of Photoexcited Indium Antimonide. : II. Spin Dependent Properties
- Weak Localization and Correlation Effects in Indium-Tin-Oxide Films.II.Two-to-Three Dimensional Transition and Competition between Localization and Superconductivity
- Electron Distribution around a Large Electron-Hole Drop in Germanium
- Donor to Acceptor Electron Transfer in Germanium at Low Temperatures
- New Cyclotron Resonance Absorption Peaks in Germanium under High Excitation
- Time-Resolved Cyclotron Resonance Analysis of Electron-Exciton Interaction in Silicon
- Effects of Positively Charged Acceptor Centers on Cyclotron Resonance in p-Type Silicon
- Screening of Hot Electron Energy Relaxation in a Semiconductor by Shallow Impurities
- Far-Infrared Magneto-Absorption of Bound Excitons in Zinc Doped Germanium
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures. : I. Localization of Carriers and Metallic Impurity Conduction under Zero and Weak Magnetic Fields
- Donor Deionization and Impurity Conduction in Low Concentration n-Type Indium Antimonide
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures : II. Magnetic Field-Induced Metal-Nonmetal Transition
- Dynamical Properties of a Large Electron-Hole Drop in Germanium. I. Kinetics of a Strain-Confined Large Electron-Hole Drop and Its Clinging Exciton System
- Dynamical Properties of a Large Electron-Hole Drop in Germanium. II. Temperature Dependence of the Carrier Relaxation Rate and of the Pair Density in the Large Drop
- Chewing Pattern Classification in Skeletal Class III Malocclusions
- Weak Localization and Correlation Effects of Two Dimensional Electrons in Indium-Tin-Oxide Films
- Far-Infrared Magneto-Optical Study of Photoexcited Indium Antimonide. : I. General Characteristics
- Neutrality
- Determination of Deformation Potential Constants from the Electron Cyclotron Rresonance in Germanium and Silicon
- H_2O Laser Cyclotron Resonance of n-type Indium Antimonide
- Electron Scattering by Impurity Centres in Electron-Hole Liquid
- Magneto-Optical Studies of Electron-Hole Drops in Germanium by Far-Infrared Lasers
- Electron Scattering by Acceptor-Bound Excitons in Silicon : Revision of "Effects of Positively Charged Acceptor Centres on Cyclotron Resonance"
- The administration of an active vitamin D_3 analogue reduced the serum concentrations of 1-84 and truncated parathyroid hormone in pseudohypoparathyroidism type Ib patients
- Electron Scattering by Neutralized Acceptors in Germanium : I.Gallium and Indium
- Nuclear Magnetic Resonance of Na^ in Sodium Chloride Crystals
- Region-Wise Neutron Generation Times in Multi-Region Reactors
- Electron Scattering by Neutralized Acceptors in Germanium. : II. Zinc
- Impurity-Assisted Intervalley Electron Scattering of Germanium and Silicon under Uniaxial Compression
- Cyclotron Resonance of Plastically Deformed Germanium
- Doping Effect on Interlocked Ferroelectric and Structural Antiphase Domains in YMnO (Special Issue : Ferroelectric Materials and Their Applications)
- Some Speculations on Exciton-Associated Experiments in Germanium
- Cyclotron Resonance in the Valence Band of Germanium under Uniaxial Stress
- Frequency-Dependent Linewidth of Classical Cyclotron Resonance in Germanium
- Cyclotrion Resonance Studies of Ge-Si And Ge-Sn Systems
- Excitonic Polarization and Polarization Scattering in a Highly Excited Semiconductor (Selected Topics in Semiconductor Physics) -- (Excitons and Polarons)
- Boundary Condition for the Adjoint Flux Corresponding to the Flux Discontinuity of the Nodal Diffusion Equation in the Perturbation Theory
- Transdiaphragmatic intercostal hernia following blunt trauma
- Hall Measurement of $p$-Type Ge–Si Alloys
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures. III. Transport in the Band Tailing and Hopping between Donors in the Magnetic Freeze-Out Regime
- Analysis of xenon oscillation by coupled reactor model.
- Solution of two-dimensional neutron diffusion equation for triangular region by finite fourier transformation.
- Numerical Solutions of Discrete-Ordinate Neutron Transport Equations Equivalent to PL Approximation in X-Y Geometry
- Measurement of Thermal Utilization Factor in a Square Cell of UO2-H20 Lattice
- A Nuclear Resonance Study of the Recovery Process of the Plastically Deformed Potassium Iodide
- Investigation of the Uniaxial Stress Effect on the Exciton System in Pure Silicon and Germanium
- Solution of One-Dimensional Group-Diffusion Equation by Laplace Transformation
- Solution of Multigroup Transport Equation in X-Y-Z Geometry by the Spherical Harmonics Method Using Finite Fourier Transformation.
- Solution of Diffusion Equation in r-z Geometry by Finite Fourier Transformation
- Matrix extracellular phosphoglycoprotein is expressed in causative tumors of oncogenic osteomalacia