Electron Scattering by Acceptor-Bound Excitons in Silicon : Revision of "Effects of Positively Charged Acceptor Centres on Cyclotron Resonance"
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Peculiar electron cyclotron resonance behaviour in boron-doped silicon, oncemisinterpreted as due to direct electron capture by neutral acceptors and laterreinterpreted in terms of electron capture as well as scattering by A"-centres, iscarefully revisited. After examining kinetics at the key reactions of the rateprocess, shortening of the electron lifetime at low temperatures is still to be asso-chated with A'-centres. But broadening of the cyclotron resonance line withdecreasing temperature is now ascribed to scattering by excitens bound to neutralacceptors rather than to that by A"-centres.
- 社団法人日本物理学会の論文
- 1981-08-15
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