Laser Cyclotron Resonance in n-Type Indium Antimonide under the Pulsed Electric Field
スポンサーリンク
概要
- 論文の詳細を見る
A CW laser cyclotron resonance in n-type indium antimonide is carried out with the modulation by pulsed electric fields. Through this method one can judge if a particular transition arises from the impurity ground state, thus facillitating the interpretation of the somewhat ambiguous spectra of the impurity cyclotron resonance. Some considerations on the electron distribution are made using the data obtained in the present experiment.
- 社団法人応用物理学会の論文
- 1971-12-05
著者
-
KOBAYASHI Keisuke
Department of Materials Science and Engineering, Kyoto University
-
Otsuka Eizo
Department of Applied Physics, Osaka University
-
Yajima Tatsuo
Institute For Solid State Physics University Of Tokyo
-
TAKEUCHI Nobuo
Institute for Solid State Physics, University of Tokyo
-
Takeuchi Nobuo
Institute For Solid State Physics University Of Tokyo
-
Otsuka Eizo
Department Of Applied Physics Osaka City University
-
Otsuka Eizo
Department of Physics, Osaka University
関連論文
- Hard X-ray Photoemission Spectroscopy of Temperature-Induced Valence Transition in EuNi_2(Si_Ge)_2(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Study on Phase Transition of C_ through Fourier-Transform Infrared Spectroscopic Measurements
- Nuclear Multi-Relaxation at Low Magnetic Fields
- Numerical Validation of the Theory of Coupled Reactors for the Heavy Water Critical Assembly DCA
- Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium II. : Millimeter-Wave Studies on Transport Phenomena
- Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium I. : Photoluminescence Studies on Rrcombination Dynamics
- Suppression of Electron-Hole Droplet Transport by Deep Impurities in Germanium
- Magneto-Acoustical Properties of a Large Electron-Hole Drop in Stressed Germanium
- Dynamics and Kinetics of Carrier System in Photoexcited Ge and Si Observed by Optically Detected Cyclotron Resonance
- False-positive magnetic resonance imaging skeletal survey in a patient with sporadic hypophosphatemic osteomalacia
- Microwave Studies of Electron Scattering by Isolated Interstitial Oxygen and Oxygen Complex in Silicon
- Effect of Impact Ionization on Photoluminescence in Single- and Polycrystalline InP
- Optically Detected Cyclotron Resonance of Exciton and Electron-Hole Droplet Systems in Pure Germanium
- Photoprotons from Silicon and Phosphorus
- Fine Structures of Photoprotons from Si^
- Cyclotron Resonance Stydy of Ionized Impurity Scattering in Germanium with H_2O Laser for Carrier Excitation
- Broadening of Exciton Luminescence Line in Modified CdTe/ZnTe Multi-Quantum Wells
- Far-Infrared Magneto-Absorption of Bound Excitons in Beryllium Doped Germanium
- Shallow Positive Acceptor in Germanium Doped with Deep Zinc Impurity
- Correspondence between Photoluminescence and Cyclotron Resonance for Stressed Zn-Doped Ge
- Effects of Deep Impurities on Photoluminescence from Electron-Hole Droplets in Germanium
- A^+ Center and A^+ Related Complex in Zinc Doped Germanium
- Electron Scattering by Thermal Acceptors in Germanium
- Cyclotron Resonance of Thermally Quenched Germanium
- High Electron Mobility in p-Type III-V Compound Semiconductors
- Electron Scattering by Impurities in Semiconductors
- Cyclotron Resonance of Germanium-Silicon Alloys
- Cyclotron Resonance of Tin-Doped Germanium
- Quantum Transport Study of Silicon and Germanium by 4-mm Wave Cyclotron Resonance below 1°K
- Impurity-Assisted Intervalley Electron Scattering in Boron-Doped Silicon
- Cyclotron Resonance of Doped Silicon
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- Far-Infrared Magnetooptical Study of Semi-Insulating Gallium Arsenide : A New Model for the Metastable State of EL2
- Far-Infrared Magnetoplasma Absorption due to Electron-Hole Drops in Germanium
- Residual Donor Impurities in MO-CVD Gallium Arsenide
- Influence of Interface Barrier on Lateral Transport Properties for Metal/Semiconductor Systems
- Direct Evidence for a Charge-Controlled Optical Quernching of EL2 Centers in Semi-Insulating GaAs
- Line-Width of Quantum Limit Cyclotron Resonance.II.Impurity and Carrier-Carrier Scatterings in Ge,InSb and GaAs
- Line-Width of Quantum Limit Cyclotron Resonance.I.Phonon Scatterings in Ge,Si,CdS and InSb
- Electron Scattering in GaAs at the Quantum Limit
- Millimeter and Submillimeter Cyclotron Resonance Study of High-Purity ZnSe
- Cyclotron Resonance of Photoexcited Holes in High Quality ZnSe
- Laser Cyclotron Resonance in n-Type Indium Antimonide under the Pulsed Electric Field
- Photoluminescence of Bound Exciton and Bound-Double-Exciton Complex in Zinc Doped Germanium
- Donor-Like Zeeman Absorption of Exciton Bound to Zinc Acceptor in Germanium
- Higher Order Optical Mixing of Raman Laser Light in Nonlinear Dielectric Media
- Carrier Lifetime Determination through Stress-Associated Cyclotron Resonance
- Far-Infrared Magneto-Optical Study of Photoexcited Indium Antimonide. : II. Spin Dependent Properties
- Weak Localization and Correlation Effects in Indium-Tin-Oxide Films.II.Two-to-Three Dimensional Transition and Competition between Localization and Superconductivity
- Electron Distribution around a Large Electron-Hole Drop in Germanium
- Donor to Acceptor Electron Transfer in Germanium at Low Temperatures
- New Cyclotron Resonance Absorption Peaks in Germanium under High Excitation
- Time-Resolved Cyclotron Resonance Analysis of Electron-Exciton Interaction in Silicon
- Effects of Positively Charged Acceptor Centers on Cyclotron Resonance in p-Type Silicon
- Screening of Hot Electron Energy Relaxation in a Semiconductor by Shallow Impurities
- Far-Infrared Magneto-Absorption of Bound Excitons in Zinc Doped Germanium
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures. : I. Localization of Carriers and Metallic Impurity Conduction under Zero and Weak Magnetic Fields
- Donor Deionization and Impurity Conduction in Low Concentration n-Type Indium Antimonide
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures : II. Magnetic Field-Induced Metal-Nonmetal Transition
- Dynamical Properties of a Large Electron-Hole Drop in Germanium. I. Kinetics of a Strain-Confined Large Electron-Hole Drop and Its Clinging Exciton System
- Dynamical Properties of a Large Electron-Hole Drop in Germanium. II. Temperature Dependence of the Carrier Relaxation Rate and of the Pair Density in the Large Drop
- Chewing Pattern Classification in Skeletal Class III Malocclusions
- Weak Localization and Correlation Effects of Two Dimensional Electrons in Indium-Tin-Oxide Films
- Far-Infrared Magneto-Optical Study of Photoexcited Indium Antimonide. : I. General Characteristics
- Neutrality
- Determination of Deformation Potential Constants from the Electron Cyclotron Rresonance in Germanium and Silicon
- H_2O Laser Cyclotron Resonance of n-type Indium Antimonide
- Electron Scattering by Impurity Centres in Electron-Hole Liquid
- Magneto-Optical Studies of Electron-Hole Drops in Germanium by Far-Infrared Lasers
- Electron Scattering by Acceptor-Bound Excitons in Silicon : Revision of "Effects of Positively Charged Acceptor Centres on Cyclotron Resonance"
- The administration of an active vitamin D_3 analogue reduced the serum concentrations of 1-84 and truncated parathyroid hormone in pseudohypoparathyroidism type Ib patients
- Electron Scattering by Neutralized Acceptors in Germanium : I.Gallium and Indium
- Nuclear Magnetic Resonance of Na^ in Sodium Chloride Crystals
- Region-Wise Neutron Generation Times in Multi-Region Reactors
- Electron Scattering by Neutralized Acceptors in Germanium. : II. Zinc
- Impurity-Assisted Intervalley Electron Scattering of Germanium and Silicon under Uniaxial Compression
- Cyclotron Resonance of Plastically Deformed Germanium
- Doping Effect on Interlocked Ferroelectric and Structural Antiphase Domains in YMnO (Special Issue : Ferroelectric Materials and Their Applications)
- Some Speculations on Exciton-Associated Experiments in Germanium
- Cyclotron Resonance in the Valence Band of Germanium under Uniaxial Stress
- Frequency-Dependent Linewidth of Classical Cyclotron Resonance in Germanium
- Cyclotrion Resonance Studies of Ge-Si And Ge-Sn Systems
- Excitonic Polarization and Polarization Scattering in a Highly Excited Semiconductor (Selected Topics in Semiconductor Physics) -- (Excitons and Polarons)
- Boundary Condition for the Adjoint Flux Corresponding to the Flux Discontinuity of the Nodal Diffusion Equation in the Perturbation Theory
- Transdiaphragmatic intercostal hernia following blunt trauma
- Hall Measurement of $p$-Type Ge–Si Alloys
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures. III. Transport in the Band Tailing and Hopping between Donors in the Magnetic Freeze-Out Regime
- Analysis of xenon oscillation by coupled reactor model.
- Solution of two-dimensional neutron diffusion equation for triangular region by finite fourier transformation.
- Numerical Solutions of Discrete-Ordinate Neutron Transport Equations Equivalent to PL Approximation in X-Y Geometry
- Measurement of Thermal Utilization Factor in a Square Cell of UO2-H20 Lattice
- A Nuclear Resonance Study of the Recovery Process of the Plastically Deformed Potassium Iodide
- Investigation of the Uniaxial Stress Effect on the Exciton System in Pure Silicon and Germanium
- Solution of One-Dimensional Group-Diffusion Equation by Laplace Transformation
- Solution of Multigroup Transport Equation in X-Y-Z Geometry by the Spherical Harmonics Method Using Finite Fourier Transformation.
- Solution of Diffusion Equation in r-z Geometry by Finite Fourier Transformation
- Matrix extracellular phosphoglycoprotein is expressed in causative tumors of oncogenic osteomalacia