Galvanomagnetic Properties of n-Type InSb at Low Temperatures. : I. Localization of Carriers and Metallic Impurity Conduction under Zero and Weak Magnetic Fields
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概要
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The Hall coefficient and resistivity, under zero and weak magnetic fields, ofn-InSb containing 1 x 10" -2 x 10" cm=' of excess donors have been systemati-cally investigated at liquid helium temperatures. By increasing compensatingacceptors with a nearly fixed donor concentration (A.'-2 x 10"cm-'), it isobserved that the localization of the Hall carriers, or the metal-nonmetal transition,occurs at the excess donor concentration of --6 x NO" cm-' (compensation ratioA--0.7) at 1.3 K. In the metallic range, the impurity concentration has beenchanged with a nearly fixed compensation ratio (Ax0.5), and it is confirmed thatthe impurity conduction (of metallic type) is recognized in the excess donor con-centration range up to x4 X 10" cm-'.
- 社団法人日本物理学会の論文
- 1977-02-15
著者
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Otsuka Eizo
Department of Applied Physics, Osaka University
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Ishida Shuichi
Department Of Physics Faculty Of Science Osaka University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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