Effects of Positively Charged Acceptor Centers on Cyclotron Resonance in p-Type Silicon
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概要
- 論文の詳細を見る
The low temperature line-broadening of the electron cyclotron resonance in boron-doped silicon observed in the past experiment is reinterpreted in the light of new observation with the time-resolving method. The contribution of lifetime broadening once suggested is negated and scattering by A^+ centers, or positively charged acceptors, is now considered the most dominant source for making the linewidth.
- 社団法人日本物理学会の論文
- 1973-05-05
著者
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Otsuka Eizo
Department of Applied Physics, Osaka University
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Ohyama Tyuzi
Department Of Physics College Of General Education Osaka University
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SANADA Toshi
Department of Physics,College of General Education,Osaka University
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Sanada Toshi
Department Of Physics Osaka University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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Ohyama T.
Department of Physics, College of General Education, Osaka University
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