Far-Infrared Optically Detected Cyclotron Resonance in GaAs Layer Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Optically detected cyclotron and impurity resonances in molecular beam epitaxy (MBE)-grown GaAs are investigated in the far-infrared region in order to sturdy their mechanisms. An increase in electron temperature due to the resonant absorption is responsible for the optically detected cyclotron resonance. A photothermal effect is a dominant mechanism for the optically detected impurity resonance of Is-2p_+ in the case of the energy of the 2p_+state lying below the lowest Landau level.
- 社団法人応用物理学会の論文
- 1997-02-15
著者
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Ohyama Tyuzi
Department Of Physics College Of General Education Osaka University
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Nakata Hiroyasu
Department Of Physics Graduate School Of Science Osaka University
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Nakata Hiroyasu
Department Molecular Cell Signaling Tokyo Metropolitan Institute For Neuroscience
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Iwao Tatsuki
Department of Physics, Graduate School of Science, Osaka University
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Iwao Tatsuki
Department of Physics, Graduate School of Science, Osaka University:(Present address)Sharp Corporation Tenri
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