Investigation of the Uniaxial Stress Effect on the Exciton System in Pure Silicon and Germanium
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概要
- 論文の詳細を見る
The impact-ionization of free excitons is studied under uniaxial stress in pure silicon and germanium. The photoluminescence of hot free excitons related with light holes is observed in silicon under low excitation. The breakdown fields for the impact ionization of free excitons are 100 V/cm in silicon and 39 V/cm in germanium at zero stress. They decrease steadily with uniaxial stress. This decrease in breakdown field is due to the decrease in binding energy of the free exciton with stress. The photocurrent sharply increases when the electric field exceeds the breakdown field for free excitons. The sample resistance steadily decreases with increasing stress in the presence of illumination due to the increase of carrier density.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-11-20
著者
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Uddin Ashraf
Department Of Mathematics Shahjalal University Of Science & Technology
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Nakata Hiroyasu
Department Molecular Cell Signaling Tokyo Metropolitan Institute For Neuroscience
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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Nakata Hiroyasu
Department of Physics, College of General Education, Osaka University, Toyonaka, Osaka 560
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