Carrier Lifetime Determination through Stress-Associated Cyclotron Resonance
スポンサーリンク
概要
- 論文の詳細を見る
A new method of measuring carrier lifetime in silicon and germanium at liquid helium temperatures is introduced. It makes use of cyclotron resonance combined with application of uniaxial stress, and is intended to supplement another cyclotron resonance technique reported earlier, which measures lifetime broadening of a resonance signal. Though the knowledge of intervalley scattering rate is required, the present method has the merit of being free from the electrode-contact problem and is particularly useful for determining the lifetime of 10^<-8>_10^<-9> sec, which is too short for a direct photodecay measurement and yet too long for the other cyclotron resonance method. An appropriate example of date is given for a doubly doped p-type germanium.
- 社団法人応用物理学会の論文
- 1967-11-05
著者
-
Otsuka Eizo
Department of Applied Physics, Osaka University
-
Otsuka Eizo
Department Of Physics Osaka University
-
Shimura Mikihiko
Department Of Physics Osaka University:(present Address) Hayakawa Electric Co. Ltd.
-
Ishida Shuichi
Department Of Physics Faculty Of Science Osaka University
-
Otsuka Eizo
Department Of Applied Physics Osaka City University
関連論文
- Study on Phase Transition of C_ through Fourier-Transform Infrared Spectroscopic Measurements
- Nuclear Multi-Relaxation at Low Magnetic Fields
- Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium II. : Millimeter-Wave Studies on Transport Phenomena
- Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium I. : Photoluminescence Studies on Rrcombination Dynamics
- Suppression of Electron-Hole Droplet Transport by Deep Impurities in Germanium
- Magneto-Acoustical Properties of a Large Electron-Hole Drop in Stressed Germanium
- Dynamics and Kinetics of Carrier System in Photoexcited Ge and Si Observed by Optically Detected Cyclotron Resonance
- Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAs
- Determination of Physical Parameters of the Anderson Localization in Metallic n-InSb
- Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAs
- Microwave Studies of Electron Scattering by Isolated Interstitial Oxygen and Oxygen Complex in Silicon
- Effect of Impact Ionization on Photoluminescence in Single- and Polycrystalline InP
- Optically Detected Cyclotron Resonance of Exciton and Electron-Hole Droplet Systems in Pure Germanium
- Cyclotron Resonance Stydy of Ionized Impurity Scattering in Germanium with H_2O Laser for Carrier Excitation
- Broadening of Exciton Luminescence Line in Modified CdTe/ZnTe Multi-Quantum Wells
- Far-Infrared Magneto-Absorption of Bound Excitons in Beryllium Doped Germanium
- Shallow Positive Acceptor in Germanium Doped with Deep Zinc Impurity
- Correspondence between Photoluminescence and Cyclotron Resonance for Stressed Zn-Doped Ge
- Effects of Deep Impurities on Photoluminescence from Electron-Hole Droplets in Germanium
- A^+ Center and A^+ Related Complex in Zinc Doped Germanium
- Electron Scattering by Thermal Acceptors in Germanium
- Cyclotron Resonance of Thermally Quenched Germanium
- High Electron Mobility in p-Type III-V Compound Semiconductors
- Electron Scattering by Impurities in Semiconductors
- Cyclotron Resonance of Germanium-Silicon Alloys
- Cyclotron Resonance of Tin-Doped Germanium
- Quantum Transport Study of Silicon and Germanium by 4-mm Wave Cyclotron Resonance below 1°K
- Impurity-Assisted Intervalley Electron Scattering in Boron-Doped Silicon
- Cyclotron Resonance of Doped Silicon
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- Far-Infrared Magnetooptical Study of Semi-Insulating Gallium Arsenide : A New Model for the Metastable State of EL2
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Far-Infrared Magnetoplasma Absorption due to Electron-Hole Drops in Germanium
- Residual Donor Impurities in MO-CVD Gallium Arsenide
- Influence of Interface Barrier on Lateral Transport Properties for Metal/Semiconductor Systems
- Direct Evidence for a Charge-Controlled Optical Quernching of EL2 Centers in Semi-Insulating GaAs
- Line-Width of Quantum Limit Cyclotron Resonance.II.Impurity and Carrier-Carrier Scatterings in Ge,InSb and GaAs
- Line-Width of Quantum Limit Cyclotron Resonance.I.Phonon Scatterings in Ge,Si,CdS and InSb
- Electron Scattering in GaAs at the Quantum Limit
- Millimeter and Submillimeter Cyclotron Resonance Study of High-Purity ZnSe
- Cyclotron Resonance of Photoexcited Holes in High Quality ZnSe
- Laser Cyclotron Resonance in n-Type Indium Antimonide under the Pulsed Electric Field
- Photoluminescence of Bound Exciton and Bound-Double-Exciton Complex in Zinc Doped Germanium
- Donor-Like Zeeman Absorption of Exciton Bound to Zinc Acceptor in Germanium
- Carrier Lifetime Determination through Stress-Associated Cyclotron Resonance
- Far-Infrared Magneto-Optical Study of Photoexcited Indium Antimonide. : II. Spin Dependent Properties
- Weak Localization and Correlation Effects in Indium-Tin-Oxide Films.II.Two-to-Three Dimensional Transition and Competition between Localization and Superconductivity
- Electron Distribution around a Large Electron-Hole Drop in Germanium
- Donor to Acceptor Electron Transfer in Germanium at Low Temperatures
- New Cyclotron Resonance Absorption Peaks in Germanium under High Excitation
- Time-Resolved Cyclotron Resonance Analysis of Electron-Exciton Interaction in Silicon
- Effects of Positively Charged Acceptor Centers on Cyclotron Resonance in p-Type Silicon
- Screening of Hot Electron Energy Relaxation in a Semiconductor by Shallow Impurities
- Far-Infrared Magneto-Absorption of Bound Excitons in Zinc Doped Germanium
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures. : I. Localization of Carriers and Metallic Impurity Conduction under Zero and Weak Magnetic Fields
- Donor Deionization and Impurity Conduction in Low Concentration n-Type Indium Antimonide
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures : II. Magnetic Field-Induced Metal-Nonmetal Transition
- Dynamical Properties of a Large Electron-Hole Drop in Germanium. I. Kinetics of a Strain-Confined Large Electron-Hole Drop and Its Clinging Exciton System
- Dynamical Properties of a Large Electron-Hole Drop in Germanium. II. Temperature Dependence of the Carrier Relaxation Rate and of the Pair Density in the Large Drop
- Weak Localization and Correlation Effects of Two Dimensional Electrons in Indium-Tin-Oxide Films
- Far-Infrared Magneto-Optical Study of Photoexcited Indium Antimonide. : I. General Characteristics
- Neutrality
- Determination of Deformation Potential Constants from the Electron Cyclotron Rresonance in Germanium and Silicon
- H_2O Laser Cyclotron Resonance of n-type Indium Antimonide
- Electron Scattering by Impurity Centres in Electron-Hole Liquid
- Magneto-Optical Studies of Electron-Hole Drops in Germanium by Far-Infrared Lasers
- Electron Scattering by Acceptor-Bound Excitons in Silicon : Revision of "Effects of Positively Charged Acceptor Centres on Cyclotron Resonance"
- Electron Scattering by Neutralized Acceptors in Germanium : I.Gallium and Indium
- Nuclear Magnetic Resonance of Na^ in Sodium Chloride Crystals
- Electron Scattering by Neutralized Acceptors in Germanium. : II. Zinc
- Impurity-Assisted Intervalley Electron Scattering of Germanium and Silicon under Uniaxial Compression
- Cyclotron Resonance of Plastically Deformed Germanium
- Some Speculations on Exciton-Associated Experiments in Germanium
- Cyclotron Resonance in the Valence Band of Germanium under Uniaxial Stress
- Frequency-Dependent Linewidth of Classical Cyclotron Resonance in Germanium
- Cyclotrion Resonance Studies of Ge-Si And Ge-Sn Systems
- Excitonic Polarization and Polarization Scattering in a Highly Excited Semiconductor (Selected Topics in Semiconductor Physics) -- (Excitons and Polarons)
- Hall Measurement of $p$-Type Ge–Si Alloys
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures. III. Transport in the Band Tailing and Hopping between Donors in the Magnetic Freeze-Out Regime
- A Nuclear Resonance Study of the Recovery Process of the Plastically Deformed Potassium Iodide
- Investigation of the Uniaxial Stress Effect on the Exciton System in Pure Silicon and Germanium