Donor to Acceptor Electron Transfer in Germanium at Low Temperatures
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概要
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Electron transfer process from neutral donor to neutral acceptor in germaniumhas been observed at liquid helium temperatures in the form of a slowly decayingphotoconductivity tail after the flash of the band-gap light. The decay timeconstant is governed by the leakage flux of room temperature black body radia-tions upon the sample. Through analyzing the d.c. conductivity as well as Halldata, microwave cyclotron resonance and far-infrared magneto-absorption, thecarrier capture cross sections by neutral impurities are determined as a ftmctionof temperature: 8 x 10 "cm ' for the capture ofl electrons at neutral acceptorsand 5 x 10 " cm-' for that of holes at neutral donors, at 4.2 K with a dependenceof T-'
- 社団法人日本物理学会の論文
- 1978-08-15
著者
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Otsuka Eizo
Department of Applied Physics, Osaka University
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Ohyama Tyuzi
Department Of Physics College Of General Education Osaka University
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SANADA Toshi
Department of Physics,College of General Education,Osaka University
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MATSHUSHITA Kiyoshi
Department of Physics,College of General Education,Osaka University
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Sanada Toshi
Department Of Physics Osaka University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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Matshushita Kiyoshi
Department Of Physics College Of General Education Osaka University:the Horiba Ltd.
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