Photoluminescence of Bound Exciton and Bound-Double-Exciton Complex in Zinc Doped Germanium
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概要
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Formation and decay kinetics of a bound exciton and a bound-double-excitoncomplex in zinc doped germanium are investigated by examining the dependenceof photoluminescence intensity on excitation itatensity and by time resolvedphotoltuminescence measurement. Exciton capture cross section by a neutralacceptor is found to be 4.7 x 10 " cm' and the lifetime of the bound exciton1.8 ps at 4.2 K. The stable closed hole shell structure of the bound-double-excitoncomplex is responsible for its long lifetime 2.1 ps and such a large capture crosssection as 1.1 x 10 " cm' of exciton capture by a bound exciton. The electroncapture process by an A" related complex is proposed for the formation of abound exciton at low excitation. One can explain the brottdness of the boundexciton line in terms of a displacement of Zn impurity front the center of thesubstitutional site in the exciton capture process.
- 社団法人日本物理学会の論文
- 1985-09-15
著者
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山崎 陽司
京都府歯科医師会公衆衛生・産業歯科部
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Otsuka Eizo
Department of Applied Physics, Osaka University
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Nakata H
Osaka Univ.
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Nakata Hiroyasu
Department Molecular Cell Signaling Tokyo Metropolitan Institute For Neuroscience
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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Nakata Hirofumi
Department of Physics,College of General Education,Osaka University
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