Photoconductivity in Plastically Deformed GaAs
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概要
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Spectral response and decay process of photoconductivity were measured inplastically bent n-GaAs having room temperature carrier concentration of10" cm '. Two independent decay processes were observed; one appeared withthe excitation energy higher than 0.7 eV and the other with the excitation energyhigher than 0.9 eV. The former has shorter decay time than the latter. Results areanalyzed by the model of recombination at dislocations. Two kinds of dislocationlevels are found to exist at the positions 0.7 eV and 0.9 eV below the conductionband edge. These are considered to be associated with two kinds of partial disloca-lions which constitute 60'-As dislocation.
- 社団法人日本物理学会の論文
- 1979-12-15
著者
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Ninomiya Toshiyuki
Department Of Physics Faculty Of Science University Of Tokyo
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Nakata Hirofumi
Department Of Physics University Of Tokyo
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NINOMIYA Toshiyuki
Department of Physics,University of Tokyo
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Nakata Hirofumi
Department of Physics,College of General Education,Osaka University
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