Electrical Properties of Plastically Deformed GaAs
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概要
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Plastic deforncation of n-GaAs having rooxn-tenvperature carrier concentrationof 10" Clll-' (resistivity 10-' lQcm) in uniaxial conapression is fotmnd to producelarge increase in resistix'ity. Specixnens defornted less than 4'/. have alxtvost similartentperature-resistivity ctmrves to that of the as-grown specimen, while tlvey haveresistivity of 4x300 times as large as that of the as-grown specimtten. Specimensdefornmed more heavily have resistivity of more than 10' Ocnt and their tempera-lure-resistivity cttrves show' the large activation energy of 0.47'-L).62 eV at roomtemperature. Analyses are ntade in terutts of the percolation theory, in which it isassunced that the space charge regions around dislocations are insulating. Themtveasured activation energy sttggests that the dislocation level lies at about thecenter of the band gap (E.--1.4 eV).
- 社団法人日本物理学会の論文
- 1977-02-15
著者
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Ninomiya Toshiyuki
Department Of Physics Faculty Of Science University Of Tokyo
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Ninomiya Toshiyuki
Department Of Physics University Of Tokyo
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Nakata Hirofumi
Department Of Physics University Of Tokyo
関連論文
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- Electrical Properties of Plastically Deformed GaAs
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- Photoluminescence Decay in Amorphous As_2S_3
- A Theory of Dislocation Motion in a Crystal. II. : Two-Dimensional Lattice and on the Lorentz Force
- Photoconductivity in Plastically Deformed GaAs
- Band Structure of One-Dimensional Quasicrystal and Lie Algebra
- Teory of Melting, Dislocation Model. : II
- Reply to Comment on the Dislocation Model of Amorphous Germanium
- Theory of Melting, Dislocation Model. : I
- Frictional Force Acting on a Dislocation : Fluttering Mechanism
- A Theory of Dislocation Motion in a Crystal. I. : General and Application to One-Dimensional Lattice
- Dislocation Motion in an Impure Crystal : I. Steady Motion